Publications

Google Scholar: https://scholar.google.com/citations?user=FqxwbBMAAAAJ&hl=en

  1. Detection and identification of genetic material via single-molecule conductance, Y Li, JM Artés, B Demir, S Gokce, HM Mohammad, M Alangari, …, Nature nanotechnology, 1 (2018)
  2. Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory
    Z Wan, H Mohammad, Y Zhao, C Yu, RB Darling, MP Anantram, Journal of Applied Physics 124 (10), 105301 (2018)
  3. Impact of doping on bonding energy hierarchy and melting of phase change materials, J Liu, E Wang, Y Zhao, X Xu, JS Moon, MP Anantram, Journal of Applied Physics 124 (9), 094503 (2018)
  4. Bipolar Resistive Switching Characteristics of Thermally Evaporated V2O5Thin Films, Z. Wan, H. Mohammad, Y. Zhao, R. B. Darling and M. P. Anantram, IEEE Electron Device Letters, vol. 39, no. 9, pp. 1290-1293 (2018). doi: 10.1109/LED.2018.2855199
  5. Nanoink bridge-induced capillary pen printing for chemical sensors, Nanotechnology, Seong-Joong Kahng and Chiew Cerwyn and Brian M Dincau and Jong-Hoon Kim and Igor V Novosselov and M P Anantram and Jae-Hyun Chung, volume 29, number=33, pages 335304 (2018); https://doi.org/10.1088/1361-6528/aac84a
  6. Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance, D Shiri, A Verma, R Nekovei, A Isacsson, CR Selvakumar, MP Anantram, Scientific reports 8 (1), 6273 (2018)
  7. Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets, Robin B Jacobs-Gedrim, Michael T Murphy, Fan Yang, Nikhil Jain, Mariyappan Shanmugam, Eui Sang Song, Yudhister Kandel, Parham Hesamaddin, Hong Yu Yu, MP Anantram, David B Janes, Bin Yu, Applied Physics Letters 112 (13), 133101 (2018)
  8. Analysis of electrical-field-dependent Dzyaloshinskii-Moriya interaction and magnetocrystalline anisotropy in a two-dimensional ferromagnetic monolayer, J Liu, M Shi, J Lu, MP Anantram, Physical Review B 97 (5), 054416 (2018)
  9. Extenuated interlayer scattering in double-layered graphene/hexagonal boron nitride heterostructure, N Jain, F Yang, RB Jacobs-Gedrim, X Xu, MP Anantram, B Yu, Carbon 126, 17-22 (2018)
  10. A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure, Z Wan, RB Darling, A Majumdar, MP Anantram, Applied Physics Letters 111 (4), 041601 (2017)
  11. Photo absorption enhancement in strained silicon nanowires: An atomistic study, Daryoush Shiri, M. Golam Rabbani, Jianqing Qi, Andrei K. Buin, and M. P. Anantram, Journal of Applied Physics, volume 122, pages 034302 (2017); doi: http://dx.doi.org/10.1063/1.4993587
  12. A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure, Z Wan, RB Darling, A Majumdar, MP Anantram, Applied Physics Letters, volume 111 (4), pages 041601 (2017); http://dx.doi.org/10.1063/1.4995411
  13. Moderate bending strain induced semiconductor to metal transition in Si nanowires, M Golam Rabbani, Sunil R Patil and M P Anantram, Semiconductor Science and Technology, volume 31 (12), pages 125019 (2016); https://doi.org/10.1088/0268-1242/31/12/125019
  14. Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering, Y. Zhao, Z. Wan, U. Hetmanuik, M. P. Anantram, IEEE Electron Device Letters, vol. 37 (9), pages 1242-1245 (2016); DOI: 10.1109/LED.2016.2595522
  15. Nested dissection solver for transport in 3D nano-electronic devices, Y Zhao, U Hetmaniuk, SR Patil, J Qi, MP Anantram, Journal of Computational Electronics 15 (2), 708-720 (2016); DOI: 10.1007/s10825-015-0778-x
  16. Comparing Charge Transport in Oligonucleotides: RNA:DNA Hybrids and DNA Duplexes, Yuanhui Li, Juan M. Artés, Jianqing Qi, Ian A. Morelan, Paul Feldstein, M. P. Anantram, and Joshua Hihath, J. Phys. Chem. Lett., vol. 7 (10), pp 1888–1894 (2016); DOI: 10.1021/acs.jpclett.6b00749
  17. Photon Induced Negative Capacitance in Metal Oxide Semiconductor Structures, Anita Roudsari ; Iman Khodadad ; Simarjeet Saini ; M. Anantram, IEEE Transactions on Nanotechnology, vol. PP, p. 1 (2016); DOI: 10.1109/TNANO.2016.2519897
  18. Tailoring optical absorption in silicon nanostructures from UV to visible light: A TDDFT study, Walid M.I. Hassan, M.P. Anantram, Reza Nekovei, Mahmoud M. Khader, Amit Verma, Solar Energy, vol. 126, pp 44-52 (2016), http://dx.doi.org/10.1016/j.solener.2015.11.030
  19. Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires, M Golam Rabbani and Sunil R Patil and Amit Verma and Julian E Villarreal and Brian A Korgel and Reza Nekovei and Mahmoud M Khader and R B Darling and M P Anantram, Nanotechnology, vol. 27, p 045201 (2016); http://dx.doi.org/10.1088/0957-4484/27/4/045201
  20. Tailoring Optical Absorption in Silicon Nanostructures from UV to Visible Light: A TDDFT Study, W. M. I. Hassan, M. P. Anantram, Reza Nekovei, Mahmoud M Khader, Amit Verma Solar Energy, volume 126, pages 44-52 (2016); doi:10.1016/j.solener.2015.11.030
  21. A Reduced-Order Method for Coherent Transport Using Green’s Functions, U. Hetmaniuk, D. Ji, Y. Zhao, M. P. Anantram IEEE Transactions on Electron Devices, volume 62, pages 736-742 (2015) DOI: 10.1109/TED.2015.2395420
  22. Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires, M Golam Rabbani, Sunil R Patil, Amit Verma, Julian E Villarreal, Brian A Korgel, Reza Nekovei, Mahmoud M Khader, RB Darling, MP Anantram, Nanotechnology, vol. 27, pages 045201 (2015); doi:10.1088/0957-4484/27/4/045201
  23. Conformational gating of DNA conductance, Juan Manuel Artes, Yuanhui Li, Jianqing Qi, Ian A. Morelan, Paul Feldstein, M. P. Anantram, Joshua Hihath, Nature Communications, volume 6, Article number: 8870 (2015) doi:10.1038/ncomms9870 [http://www.nature.com/ncomms/2015/151209/ncomms9870/full/ncomms9870.html
  24. The role of cytosine methylation on charge transport through a DNA strand, J. Qi, N. Govind, M. P. Anantram The Journal of chemical physics, volume 143, pages 094306 (2015) http://dx.doi.org/10.1063/1.4929909
  25. Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis, Y. Zhao, Z. Wan, X. Xu, S. R. Patil, U. Hetmaniuk, M. P. Anantram Scientific reports, volume 5, pages 1-10 (2015) doi:10.1038/srep10712
  26. Conduction in alumina with atomic scale copper filaments, Xu Xu, Jie Liu, M. P. Anantram, Journal of Applied Physics, volume 116, pages 163701 (2014) http://dx.doi.org/10.1063/1.4898073
  27. Role of inelastic electron-phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures, Jie Liu, Xu Xu, M. P. Anantram, Journal of Computational Electronics, pages 1-7 (2014) http://dx.doi.org/10.1007/s10825-014-0579-7
  28. Subthreshold electron transport properties of ultrascaled phase change memory, Jie Liu, Xu Xu, M. P. Anantram, Electron Device Letters, IEEE, vol. 35, no. 5, pages 533-535, DOI 10.1109/LED.2014.2311461
  29. A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory, Jie Liu, Xu Xu, Lucien Brush and M. P. Anantram, Journal of Applied Physics, vol. 115 , 023513 (2014) ;http://dx.doi.org/10.1063/1.4861721
  30. Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells, M Golam Rabbani, Amit Verma, Michael M Adachi, Jency P Sundararajan, Mahmoud M Khader, Reza Nekovei, M. P. Anantram, Solar Energy Materials and Solar Cells, volume 130, pages 456-465 (2014) http://dx.doi.org/10.1007/s10825-014-0579-7
  31. Low-bias electron transport properties of germanium telluride ultrathin films, J. Liu, M. P. Anantram, Journal of Appled Physics, vol. 113, p. 063711 (2013)
  32. Core-shell silicon nanowire solar cells, M. M. Adachi, M. P. Anantram, K. S. Karim, Scientific Reports, volume 3, 1546, DOI: 10.1038/srep01546 (2013)
  33. A nested dissection approach to modeling transport in nanodevices: Algorithms and applications, Ulrich Hetmaniuk, Yunqi Zhao, M. P. Anantram, International Journal for Numerical Methods in Engineering, vol. 95, pages 587-607, DOI: 10.1002/nme.4518 (2013)
  34. Modeling of electron transport in biomolecules: Applications to DNA, with Jianqing Qi, Anantram, M. P., Qi, J. Proceedings of 2013 IEDM, IEDM13-798, p. 32.3.1 to 32.3.4, ISBN 9781479937264
  35. H+-type and OH–type biological protonic semiconductors and complementary devices, Deng, Y., Josberger, E., Jin, J., Rousdari, A. F., Helms, B. A., Zhong, C., Anantram, M. P., Rolandi, M., Scientific Reports, Volume 3, Article number: 2481 (2013); doi:10.1038/srep02481
  36. Unified model for conductance through DNA with the Landauer-Buttiker formalism, J. Qi, N. Edirisinghe, M. G. Rabbani, M. P. Anantram, Physical Review B, vol. 87, article no. 085404 (2013)
  37. Reversible Modulation of Spontaneous Emission by Strain in Silicon Nanowires, Shiri, D., Verma, A., Selvakumar, C. R., Anantram, M. P, Scientific Reports, Volume 2, Article Number 461, http://dx.doi.org/10.1038/srep00461 (2012)
  38. A polysaccharide bioprotonic field-effect transistor, C. Zhong, Y. Deng, A. F. Roudsari, A. Kapetanovic, M. P. Anantram & M. Rolandi, Nature Communications, Volume. 2, Article number: 476, doi:10.1038/ncomms1489 (2011)
  39. High Gain Multiple-Gate Photodetector with Nanowires in the Channel, Roudsari, AF. and Saini, S.S. and Nixon, O. and Anantram, M. P., Electron Device Letters, IEEE, volume 32, no. 3, pages 357-359 (2011) DOI 10.1109/LED.2010.2103044
  40. Optical Properties of Crystalline-Amorphous Core – Shell Silicon Nanowires, M. M. Adachi, M. P. Anantram, and K. S. Karim, Nano Letters, vol. 10, pages 4093-7 (2010)
  41. High-field hole transport in silicon nanowires, A. Verma, A. K. Buin, and M. P. Anantram, J. Appl. Phys., vol. 106, Article no. 113713 (2009)
  42. Carrier-phonon interaction in small cross-sectional silicon nanowires, A. Buin, A. Verma and M. P. Anantram, J. of Appl. Phys., vol. 104, p. 053716 (2008)
  43. Strain induced change of bandgap and effective mass in silicon nanowires, D. Shiri, Y. Kong, A. Buin, and M. P. Anantram, Appl. Phys. Lett., vol. 93, p. 073114 (2008)
  44. Enhancement of hole mobility in [110] Silicon Nanowires, A. Buin, A. Verma, A. Svizhenko and M. P. Anantram, Nano letters, vol. 8, p. 760-765 (2008)
  45. Ballistic Quantum Simulators for Studying Variability in Nanotransistors, A. Martinez, J. R. Barker, A. Svizhenko, A. Anantram, M. Bescond, and A. Asenov, Journal of Computational and Theoretical Nanoscience, vol. 5, p. 1–22 (2008)
  46. Modeling of Nanoscale Devices, M. P. Anantram, M. Lundstrom and D. Nikonov, Proc. IEEE, v. 96, p. 1511-1550 (2008)
  47. Multi-dimensional modeling of nanotransistors, M. P. Anantram and A. Svizhenko, IEEE Trans. Elec. Dev., v. 54, p. 2100-2115 (2007)
  48. A Self-Consistent Full 3-D Real-Space NEGF Simulator for Studying Nonperturbative Effects in Nano-MOSFETs, A. Martinez, M. Bescond, J. R. Barker, A. Svizhenko, M. P. Anantram, C. Millar, A. Asenov, IEEE Trans. Elec. Dev., v. 54, p. 2213-2222 (2007)
  49. The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study, A. Martinez, J. R. Barker, A. Svizhenko, M. P. Anantram, A. Asenov, IEEE Transactions on Nanotechnology, vol. 6, pages 438-444 (2007)
  50. A. Martinez, J. R. Barker, A. Asenov, A. Svizhenko, M. P. Anantram, Developing a full 3D NEGF simulator with random dopant and interface roughness, Journal of Computational Electronics, v. 6, p. 215-218 (2007)
  51. Non-equilibrium Green’s function treatment of phonon scattering in carbon nanotube transistors, S. O. Koswatta, Sayed Hasan, and Mark S. Lundstrom, M. P. Anantram, Dmitri E. Nikonov, IEEE Trans. Elec. Dev., vol. 54, pages. 2339 – 2351 (2007)
  52. Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias, S. O. Koswatta, Sayed Hasan, Mark S. Lundstrom, M. P. Anantram, and Dmitri E. Nikonov, Appl. Phys. Lett., v. 89, 023125 (2006)
    Influence of defects on nanotube transistor performance, N. Neophytou, D. Kienle, Eric Polizzi and M. P. Anantram, Appl. Phys. Lett., v. 88, p. 242106 (2006)
  53. Carbon nanotube electronic devices, M. P. Anantram and F. Leonard, Reports of Progress in Physics, v. 69, 507-561 (2006)
  54. Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors, S. O. Koswatta, Mark S. Lundstrom, M. P. Anantram and Dmitri E. Nikonov, Appl. Phys. Lett., v. 87, p. 253107 (2005)
  55. Effect of scattering and contacts on current and electrostatics in carbon nanotubes, A. Svizhenko and M. P. Anantram, Phys. Rev. B, v. 72, p. 085430 (2005)
  56. Analysis of band gap formation in squashed arm-chair CNT, H. Mehrez, A. Svizhenko, M. P. Anantram, M. Elstner and T. Fraunheim, Phys. Rev. B, v. 71, 155421 (2005)
  57. Ballistic transport and electrostatics in carbon nanotubes, A. Svizhenko, M. P.Anantram, T. R.Govindan, IEEE Transactions on Nanotechnology, v. 4, p. 557 (2005)
  58. Atomistic simulation of carbon nanotube field effect transistors using non equilibrium Green’s function formalism, J. Guo, S. Datta, M. P. Anantram and M. Lundstrom, Journal of Computational Electronics, v. 3, p. 373 (2005)
  59. Inter-base electronic coupling for transport through DNA, H. Mehrez and M. P. Anantram, Phys. Rev. B, vol. 71, p. 115405 (2005)
  60. Electronic properties of O2 doped DNA, H. Mehrez, S. Walch and M. P. Anantram, Phys. Rev. B, vol. 72, p. 035441 (2005)
  61. Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation, H. Tsuchiya, A. Svizhenko, M. P. Anantram, M. Ogawa and T. Miyoshi, Journal of Computational Electronics, v. 4, p. 35 (2005)
  62. Influence of counter-ion-induced disorder in DNA conduction, Ch. Adessi, S. Walch and M. P. Anantram, Appl. Phys. Lett., vol. 82, p. 2353 (2003)
  63. Environment and structure influence on DNA conduction, Ch. Adessi, S. Walch and M. P. Anantram, Phys. Rev. B, vol. 67, p. 81405(RC) (2003)
  64. Role of Scattering in Nanotransistors, A. Svizhenko and M. P. Anantram, IEEE Trans. Elec. Dev., vol. 50, p. 1459-1466 (2003)
  65. Bonding geometry and bandgap changes of carbon nanotubes under uniaxial and torsional strain, Liu Yang; Jie Han; Anantram, M.P.; Jaffe, R.L., Computer Modeling in Engineering & Sciences , vol. 3, p. 675 (2003)
  66. Two Dimensional Quantum Mechanical Modeling of Nanotransistors, A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel and R. Venugopal, J. of Appl. Phys., vol. 91, p. 2343 (2002)
  67. Atomistic simulations with carbon nanotubes-classical, quantum, and transport modeling, Maiti, A.; Andzelm, J.; Svizhenko, A.; Anantram, M.P.; Panhuis, M., Physica Status Solidi B, Phys. Status Solidi B (Germany) , vol. 233, p. 49 (2002)
  68. Electronic Transport through Carbon Nanotubes: Effects of Structural Deformation and Tube, Chirality, A. Maiti, A. Svizhenko and M. P. Anantram, Phys. Rev. Lett., vol. 88, p. 126805 (2002)
  69. Nanotubes in nanoelectronics: transport, growth and modeling, M. P. Anantram, L. Delzeit, A. Cassell, J. Han and M. Meyyappan, Physica E, vol. 11, p. 118 (2001)
  70. Resonant versus anti-resonant tunneling at carbon nanotube A-B-A heterostructures, N. Mingo, L. Yang, J. Han, M. P. Anantram, Physica Status Solidi B, vol. 226, p. 79 (2001)
  71. Potential drop along carbon nanotube devices with current flow, N. Mingo, J. Han, M. P. Anantram, L. Yang, Surface Science, vol. 482-485, pt.2 , pp. 1130 (2001)
  72. Which nanowire couples better to a metal contact: Armchair or Zigzag nanotube?, M. P. Anantram, Appl. Phys. Lett., vol. 78, p. 2055, (2001)
  73. Current-carrying capacity of nanotubes, M. P. Anantram, Phys. Rev. B, vol. 62, p. 4837 (2000)
    Coupling of carbon nanotubes to metallic contacts, M. P. Anantram, S. Datta and Y. Xue, Phys. Rev. B, vol. 61, p. 14219 (2000)
  74. Transport through nanotubes with polyhedral caps, M. P. Anantram and T. R. Govindan, Phys. Rev. B, vol. 61, p. 5020 (2000)
  75. Bandgap change of carbon nanotubes : Effect of small uniaxial and torsional strain, Liu Yang, M. P. Anantram, Jie Han and J. P. Lu, Phys. Rev. B, vol. 60, p. 13874 (1999)
  76. Single Particle Transport through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap, M. P. Anantram and T. R. Govindan, “Science and Application of Nanotubes”, D. Tomanek and J. Enbody (eds.), Kluwer Academic / Plenum Publishers (1999)
  77. Spatially correlated qubit errors and burst-correcting quantum codes, F. Vatan, V. P. Roychowdhury, M. P. Anantram, IEEE Transactions on Information Theory, vol. 45, p. 1703 (1999)
  78. Metastable states and information propagation in a one-dimensional array of locally coupled bistable cells, M. P. Anantram and V. P. Roychowdhury, Journal of Applied Physics, vol. 85, p. 1622 (1999)
  79. Conductance in carbon nanotubes with defects: A numerical study, M. P. Anantram and T. R. Govindan, Phys. Rev. B, vol. 58, p. 4882 (1998)
  80. Observation and Modeling of Single Wall Carbon Nanotube Bend Junctions, Jie Han, M. P. Anantram, R. Jaffe and H. Dai, Phys. Rev. B, vol. 57, p. 14983 (1998)
  81. Transport in Carbon Nanotubes with Defects, M. P. Anantram, J. Han and T. R. Govindan, Ann. of the New York Acad. of Sc. vol. 852, p. 169 (1998)
  82. Charging effects in the ac conductance of a double barrier resonant tunneling structure, M. P. Anantram, Journal of Physics: Condensed Matter, vol. 10, p. 9015 (1998)
  83. Fundamental issues in atomic/nanoelectronic computation, M. P. Anantram and V. P. Roychowdhury, “Communication, Computing, Control and Signal Processing”, A. Paulraj, V. P. Roychowdhury and C. Shaper (eds.), Kluwer Academic Press, Boston, p. 219 (1997)
  84. Scattering Theory of Mesoscopic Superconductivity, S. Datta, P. F. Bagwell and M. P. Anantram, Physics of Low Dimensional Structures Vol. 3, p. 1 (1996)
  85. Current Fluctuations in Mesoscopic Systems with Superconducting Regions, M. P. Anantram and S. Datta, Phys. Rev. B, Phys. Rev B, vol. 53, p. 16390 (1996)
  86. Effect of Phase-Breaking on the ac Response of Mesoscopic Systems, M. P. Anantram and S. Datta, Phy. Rev. B, vol. 51, p. 7632 (1995)
  87. Resonant Tunneling Devices: Effect of Scattering (invited), S. Datta, G. Klimeck, R. K. Lake and M. P. Anantram, Inst. Phys. Conf. Ser. No. 141, Chapter 7, p. 775 (1994)
  88. Rate Equations for the Phonon Peak in Resonant Tunneling Diodes, R. K. Lake, G. Klimeck, M. P. Anantram and S. Datta, Phy. Rev. B, vol. 48, p. 15132 (1993)
  89. Steady-State Transport in Mesoscopic Systems Illuminated by Alternating Fields, S. Datta and M. P. Anantram, Phy. Rev. B, vol. 45, p. 13761 (1992)